Fano effect in a few-electron quantum dot
Fano effect in a few-electron quantum dot
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DOI：
10.1143/jpsj.76.084706
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发表时间：
2007-08-01
影响因子：
1.7
通讯作者：
Kang, Kicheon
中科院分区：
文献类型：
--
作者：
Otsuka, Tomohiro;Abe, Eisuke;Kang, Kicheon
我们研究了与量子线侧面耦合的几电子量子点中的Fano效应。导线的电导通过干涉(法诺效应)和电荷效应被修正，呈现出无点的有序阶梯状量子化。这些效应被用来验证点中电子的耗尽。该点的“附加能谱”显示为壳层结构，表明电子限制势是相当圆形的。观察到了第一电导平台上Fano参数随栅极电压变化的快速符号反转，并通过引入有限宽度的点-线耦合进行了解释。
We have studied the Fano effect in a few-electron quantum dot side-coupled to a quantum wire. The conductance of the wire, which shows an ordinal staircase-like quantization without the dot, is modified through the interference (the Fano effect) and the charging effects. These effects are utilized to verify the exhaustion of electrons in the dot. The "addition energy spectrum" of the dot shows a shell structure, indicating that the electron confinement potential is fairly circular. A rapid sign inversion of the Fano parameter on the first conductance plateau with the change of the wire gate voltage has been observed, and explained by introducing a finite width of dot-wire coupling.