Influence of exponential doping structure on the performance of GaAs photocathodes
Influence of exponential doping structure on the performance of GaAs photocathodes
复制标题
指数掺杂结构对GaAs光电阴极性能的影响
DOI：
10.1364/ao.48.005445
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发表时间：
2009-10-10
期刊：
影响因子：
1.9
通讯作者：
Xiong, Yajuan
中科院分区：
文献类型：
--
作者：
Niu, Jun;Zhang, Yijun;Xiong, Yajuan
获得更高量子效率和更稳定的GaAs光电阴极一直是GaAs光电阴极研究的重要发展方向。解决这个问题的一个重要方法是提高电子扩散长度。我们提出并研究了指数掺杂模式的砷化镓光电阴极。理论和实验结果证明，由于指数掺杂结构有利于形成方向恒定的内建电场，因此可以提高阴极材料的电子扩散和漂移长度。推导了指数掺杂光电阴极电子扩散和漂移长度L-DE的数学表达式，并确定了掺杂系数与电子扩散和漂移长度之间的关系。这项研究有助于理解不同掺杂的砷化镓光电阴极，并为优化砷化镓光电阴极的掺杂结构以获得更高的量子效率提供指导。 (C) 2009 美国光学学会
Obtaining higher quantum efficiency and more stable GaAs photocathodes has been an important developmental direction in the investigation of GaAs photocathodes. One significant approach to this problem is to improve the electron diffusion length. We put forward and investigate an exponential doping mode GaAs photocathode. It was proved by theoretical and experimental results that, because the exponential doping structure is in favor of forming a directional constant built-in electric field, the electron diffusion and drift length of the cathode material can accordingly be enhanced. The mathematical expression of the electron diffusion and drift length L-DE of an exponential doping photocathode was deduced, and the relationship between the doping coefficient and the electron diffusion and drift length is made certain. This investigation contributes to the understanding of varied doping GaAs photocathodes and provides guidance to optimize the doping structure of GaAs photocathodes for higher quantum efficiency. (C) 2009 Optical Society of America