Sub-100-nW-threshold Raman silicon laser designed by a machine-learning method that optimizes the product of the cavity Q-factors
Sub-100-nW-threshold Raman silicon laser designed by a machine-learning method that optimizes the product of the cavity Q-factors
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DOI：
10.1364/oe.423470
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发表时间：
2021-05-24
期刊：
影响因子：
3.8
通讯作者：
Takahashi, Yasushi
中科院分区：
文献类型：
--
作者：
Kawakatsu, Taro;Asano, Takashi;Takahashi, Yasushi
基于光子晶体纳米腔的拉曼硅激光器已经实现，其连续激光阈值为几百微瓦。特别地，阈值取决于两个纳米腔模式中的激发光和拉曼散射光的限制程度。在这里，我们报告较低的阈值为拉曼硅纳米腔激光器通过增加两个腔模式的质量（Q）因子实现。通过使用基于机器学习的优化方法，我们首先将两个理论Q值的乘积与传统腔相比增加了17.0倍。实验评估表明，平均而言，实际获得的产品是传统腔的2.5倍以上。给出了阈值为90 nW的拉曼激光器的输入输出特性，实验中获得的最低阈值为40 nW。(C)根据OSA开放获取出版协议的条款，2021年美国光学学会
Raman silicon lasers based on photonic crystal nanocavities with a threshold of several hundred microwatts for continuous-wave lasing have been realized. In particular, the threshold depends on the degree of confinement of the excitation light and the Raman scattering light in the two nanocavity modes. Here, we report lower threshold values for Raman silicon nanocavity lasers achieved by increasing the quality (Q) factors of the two cavity modes. By using an optimization method based on machine learning, we first increase the product of the two theoretical Q values by a factor of 17.0 compared to the conventional cavity. The experimental evaluation demonstrates that, on average, the actually achieved product is more than 2.5 times larger than that of the conventional cavity. The input-output characteristic of a Raman laser with a threshold of 90 nW is presented and the lowest threshold obtained in our experiments is 40 nW. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement