The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress
The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress
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DOI：
10.1109/jeds.2023.3297329
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发表时间：
2023
影响因子：
2.3
通讯作者：
Yijun Shi;Shan Wu;Zhiyuan He;Z. Cai;Liye Cheng;Yunliang Rao;Qingzhong Xiao;Yiqiang Chen;G. Lu
中科院分区：
文献类型：
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作者：
Yijun Shi;Shan Wu;Zhiyuan He;Z. Cai;Liye Cheng;Yunliang Rao;Qingzhong Xiao;Yiqiang Chen;G. Lu
在这项工作中，由于芯片级损伤的电气特性的故障及其与封装级退化的关系已经在长期重复功率循环测试（PCT）的共源共栅GaN器件进行了研究。首先，发现器件的转移特性和阈值电压直到8000个循环PCT才发生变化，而其通态电流随着循环次数的增加而减小。同时，器件的栅-源漏电流在8000次循环后没有变化，但漏-源漏电流显著增加。通过TCAD模拟和EMMI分析，证实了上述现象是由于GaN HEMT栅区结构损伤所致。然后，它被发现，器件的热阻增加后，重复的功率循环测试，这是由于封装级退化。热阻的增加会导致热积累的增加，这一点已经被TCAD模拟所证实，从而导致共源共栅GaN器件的芯片级损伤和电性能失效。相关结果有助于提高共源共栅GaN器件的长期可靠性。
In this work, the electrical characteristics’ failure due to the chip-level damage and its relationship with the package-level degradation have been investigated for the Cascode GaN device under long-term repetitive power cycling test (PCT). At first, it is found that, the device’s transfer characteristics and threshold voltages have not changed until 8000-cycle PCT, while its on-state current decreases as the increases in cycles number. Meanwhile, the device’s gate-to-source leakage have not changed even after 8000-cycle PCT, but there is a significant increase in drain-to-source leakage. The above phenomenon has been attributed to the structural damage in the gate region of GaN HEMT, which has been verified by TCAD simulation and EMMI analysis. Then, it is found that the device’s thermal resistance is increased after the repetitive power cycling test, which is due to the package-level degradation. The increased thermal resistance will lead to the increase of heat accumulation, which has been verified by TCAD simulation, subsequently leading to the chip-level damage and electrical performance failure for Cascode GaN device. The relevant results may help to improve the long-term reliability of Cascode GaN device.