Ultrafast and Low-Turn-OFF Loss Lateral IEGT With a MOS-Controlled Shorted Anode
Ultrafast and Low-Turn-OFF Loss Lateral IEGT With a MOS-Controlled Shorted Anode
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DOI：
10.1109/ted.2018.2873766
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发表时间：
2019-01-01
影响因子：
3.1
通讯作者：
Zhang, Bo
中科院分区：
文献类型：
--
作者：
Wei, Jie;Luo, Xiaorong;Zhang, Bo
提出并通过仿真研究了一种新型超快、低损耗横向注入增强型栅极晶体管（LIEGT）。该器件具有 MOS 控制的短路阳极 (MCSA) 以及在阳极沟槽栅极 (ATG) 和阳极电极之间施加的偏置电压 (V-AG)。当 MCSA 在关断和阻断状态期间 V-AG > V-th 被激活时，n+ 阳极通过 ATG 周围的 MOS 通道与 N 缓冲器短路，因此 p+ 阳极/N 缓冲器结未激活。通过优化在关闭阴极沟槽栅极 (CTG) 之前激活 MCSA 的时间间隙，MCSA LIEGT 的关闭速度与单极器件一样快。激活的 MCSA 会停用阳极侧的空穴注入，并同步快速从 N 漂移中提取电子，从而提高开关速度并显着降低关断能量损耗 (E-OFF)。在阻断状态下，MCSA LIEGT 实现 MOS 击穿模式，而不是开路基极 p-n-p 双极击穿模式。因此，击穿电压（BV）不仅得到改善，而且与p+阳极掺杂浓度无关。在 V-AG = 0 的正向导通状态下，MCSA 未激活，因此 MCSA LIEGT 的工作方式与传统 LIEGT 类似，而不会恶化导通状态压降 (V-ON)。与传统的LIEGT相比，所提出的器件在相同V-ON的情况下将E-OFF降低了88%，并将BV提高了13%。重要的是，E-OFF 几乎独立于 V-ON。
A novel ultrafast and low-loss lateral injection-enhanced gate transistor (LIEGT) is proposed and investigated by simulation. The device features a MOS-controlled shorted anode (MCSA) and a bias voltage (V-AG) applied between the anode trench gate (ATG) and the anode electrode. The n+ anode is shorted to the N-buffer through the MOS channel around the ATG when the MCSA is activated with V-AG > V-th during turn-off and blocking states, and thus the p+ anode/N-buffer junction is unactivated. The MCSA LIEGT turns off as fast as a unipolar device by optimizing the time gap to activate the MCSA before turning off the cathode trench gate (CTG). The activated MCSA would deactivate hole injection from the anode side and synchronously quickly extract the electrons from the N-drift, which improves the switching speed and dramatically decreases the turn-off energy loss (E-OFF). In the blocking state, the MCSA LIEGT achieves a MOS break down mode instead of an open base p-n-p bipolar breakdown mode. Thus, the breakdown voltage (BV) is not only improved but also independent of the p+ anode doping concentration. In the forward conduction state with V-AG = 0, the MCSA is unactivated and hence the MCSA LIEGT operates like a conventional LIEGT without deteriorating the on-state voltage drop (V-ON). Compared with the conventional LIEGT, the proposed device decreases E-OFF by 88% and improves the BV by 13% at the same V-ON. Importantly, E-OFF is almost independent of V-ON.