Cathodoluminescence characterization of a nitrogen-doped homoepitaxial diamond thin film
Cathodoluminescence characterization of a nitrogen-doped homoepitaxial diamond thin film
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DOI：
10.1063/1.3117214
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发表时间：
2009-05
影响因子：
3.2
通讯作者：
H. Watanabe;T. Kitamura;S. Nakashima;S. Shikata
中科院分区：
文献类型：
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作者：
H. Watanabe;T. Kitamura;S. Nakashima;S. Shikata
在掺氮化学气相沉积（CVD）金刚石中，光谱的强烈修改是显而易见的。CVD金刚石中的氮空位（NV）缺陷是通过高浓度气相氮掺杂有效地产生的。特别地，575 nm中心和637 nm中心的强度在约1018 at./cm-2的N掺杂水平下增强。cm 3，而在CVD生长过程中添加氮导致激子和H3中心的淬灭。利用高分辨阴极发光实验研究了氮掺杂对同质外延CVD金刚石薄膜中激子和NV缺陷态的影响。此外，进行了拉曼实验以检测内应力。结果表明，氮掺杂使激子和与氮相关的缺陷发射光谱的峰位向长波方向移动。金刚石在1332 cm-1处的特征拉曼峰显示出随着氮掺入的增加而向较低波数移动。
Strong modification of the optical spectra is apparent in nitrogen-doped chemical vapor deposited (CVD) diamonds. Nitrogen-vacancy (NV) defects in CVD diamond are effectively created by nitrogen doping with a high concentration of the gaseous phase. In particular, the 575 nm center and 637 nm centers are enhanced in intensity at a N doping level of around 1018 at./cm3, while nitrogen addition during CVD growth leads to quenching of both the exciton and H3 centers. The influence of nitrogen doping on the exciton and NV defect states in a homoepitaxial CVD diamond thin film was investigated by high-resolution cathodoluminescence experiment. In addition, Raman experiments were performed to detect the internal stress. The results show that the exciton and nitrogen-related defect emission spectra underwent a shift of the peak position to a longer wavelength by nitrogen doping. The characteristic Raman peak of diamond at 1332 cm−1 showed a shift toward lower wave numbers with increasing nitrogen incorporation.