Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe0.6Se0.4 thin films at 1 T
Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe0.6Se0.4 thin films at 1 T
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DOI：
10.1103/physrevb.104.165412
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发表时间：
2021-10
影响因子：
3.7
通讯作者：
R. Nakamura;Masashi Tokuda;Mori Watanabe;M. Nakajima;K. Kobayashi;Y. Niimi
中科院分区：
文献类型：
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作者：
R. Nakamura;Masashi Tokuda;Mori Watanabe;M. Nakajima;K. Kobayashi;Y. Niimi
我们用测量临界电流密度的方法研究了厚度为30~150 nm的剥离型FeE薄膜器件的磁通钉扎。在体相中，磁通钉扎主要是在弱集体钉扎的框架下进行的，而对薄膜区域的钉扎机制知之甚少。在磁场为1T的恒定磁场下，J{c}与厚度的关系发现，在约70 nm处，强钉扎占主导地位，而在约100 nm处，弱集体钉扎占主导地位。这种交叉厚度可以用van der Beek提出的理论模型来解释。修订本B.$024523(2002年)]
We studied flux pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin-film devices with a thickness $d$ from 30 to 150 nm by measuring the critical current density $J_{\mathrm{c}}$. In bulk FeTe$_{0.6}$Se$_{0.4}$, the flux pinning has been discussed in the framework of weak collective pinning, while there is little knowledge on the pinning mechanism in the thin-film region. From the thickness $d$ dependence of $J_{\mathrm{c}}$ at a fixed magnetic field of 1 T, we found that the strong pinning is dominant below $d \approx 70$ nm, while the weak collective pinning becomes more important above $d \approx 100$ nm. This crossover thickness can be explained by the theoretical model proposed by van der Beek $\textit{et al}$ [Phys. Rev. B. ${\bf 66}$, 024523 (2002)].