Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers
Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers
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用于中红外带间级联激光器的分子束外延生长 InAs/GaSb/AlSb 异质结构的横截面扫描隧道显微镜表征
DOI：
10.1116/1.590081
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发表时间：
1998
影响因子：
1.4
通讯作者：
S. Pei
中科院分区：
文献类型：
--
作者：
J. Harper;M. Weimer;D. Zhang;C. Lin;S. Pei
我们用截面扫描隧道显微镜（STM）研究了InAs/GaSb/AlSb混合阴离子系统在类似于目前II型量子阱和带间级联激光器生长条件下的两个重要方面的材料和界面质量：（1）体中阴离子的交叉掺入（具体地，在GaSb层内As对Sb的非预期替代）;以及（2）在共阴离子AlSb-on-GaSb异质结处的粗糙度光谱。两个明显不同的阴离子缺陷中指出的GaSb层，但与STM观察到的体缺陷密度和砷阀设置锑化物层生长过程中的线性相关性的演示清楚地建立了背景砷掺入作为这两个缺陷的共同起源。在AlSb上的GaSb界面的粗糙度光谱显示出令人惊讶的短的相关长度，主要是由异质性的阳离子，而不是阴离子亚晶格。这些关系…
We have used cross-sectional scanning tunneling microscopy (STM) to examine two important aspects of material and interface quality in the mixed-anion InAs/GaSb/AlSb system under growth conditions similar to those presently employed for type-II quantum well and interband cascade lasers: (1) anion cross incorporation in the bulk (specifically, unintended substitution of As for Sb within the GaSb layers); and (2) the roughness spectrum at the common-anion AlSb-on-GaSb heterojunction. Two apparently different anion defects are noted in the GaSb layers, but the demonstration of a linear correlation between the bulk defect density observed with STM and the arsenic valve setting during antimonide layer growth clearly establishes background arsenic incorporation as the common origin for both of these defects. The roughness spectrum at the AlSb-on-GaSb interface displays a surprisingly short correlation length that is dominated by heterogeneity in the cation rather than anion sublattice. The relationship of these...