Effects of Gate Insulator on Thin-Film Transistors with ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition
Effects of Gate Insulator on Thin-Film Transistors with ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition
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栅绝缘体对等离子体辅助原子层沉积 ZnO 沟道层薄膜晶体管的影响
DOI：
10.1109/jdt.2012.2213237
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Yumi Kawamura
中科院分区：
文献类型：
--
作者：
Akira Matsugi;Akira Miyoshi;Yumi Kawamura;Yumi Kawamura
氧化锌（ZnO）薄膜由于其高迁移率和高透明性等特性，在薄膜晶体管（TFT）中的应用引起了广泛的关注。原子层沉积（ALD）薄膜通过源气体和氧化剂的交替暴露来沉积。ALD方法保持ZnO TFT的制造温度低。在这项研究中，我们研究了栅极绝缘层的性能与ZnO沟道层沉积等离子体辅助ALD（PAALD）的TFT的性能的影响。具有栅绝缘层的薄膜晶体管显示出高性能（5.1场效应迁移率），无需热退火。这一结果表明，在低于100 ℃的温度下，可以获得高性能的ZnO TFT与薄膜沉积的PAALD。
Zinc oxide (ZnO) thin films have attracted significant attention for application in thin-film transistors (TFTs) due to their specific characteristics, such as high mobility and transparency. The atomic layer deposition (ALD) thin film is deposited with alternating exposures of a source gas and oxidant. The ALD method keeps fabrication temperature of ZnO TFTs low. In this study, we investigated the effects of gate insulator properties on the performance of TFTs with a ZnO channel layer deposited by plasma-assisted ALD (PAALD). The TFTs withgate insulator indicated high performance (5.1field effect mobility) without thermal annealing. This result indicated a high-performance ZnO TFT with films deposited by PAALD can be obtained at temperatures below 100.