Scanning photoelectron microscopy study of Ge1−xTx (T=Cr, Fe) diluted ferromagnetic semiconductor single crystals
Scanning photoelectron microscopy study of Ge1−xTx (T=Cr, Fe) diluted ferromagnetic semiconductor single crystals
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Ge1−xTx (T=Cr, Fe) 稀铁磁半导体单晶的扫描光电子显微镜研究
DOI：
10.1063/1.1850252
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发表时间：
2005
影响因子：
3.2
通讯作者：
H. Shin
中科院分区：
文献类型：
--
作者：
G. Kim;S. Wi;S. S. Lee;J. Kang;S. Choi;Sunglae Cho;Sang;K. Kim;H. Song;H. Shin
利用扫描光电子显微镜（SPEM）、X射线吸收谱（XAS）和光电子能谱（PES）研究了Ge 1 −xTx（T=Cr，Fe）稀磁半导体的化学分布和电子结构。Ge 1 −xTx的SPEM图像和PES谱显示了由于T离子浓度分布不均匀而形成的条状区域。T2pXAS谱表明，T离子主要以二价态存在，不形成纯金属簇合物。这项研究表明，Ge 1 −xTx晶体是化学相分离的，这表明在Ge 1 −xTx中观察到的铁磁有序来自富T Ge 1 −xTx相的磁性。
The chemical distributions and electronic structures of Ge1−xTx (T=Cr, Fe) diluted ferromagnetic semiconductors have been investigated by employing scanning photoelectron microscopy (SPEM), x-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). The SPEM images and PES spectra of Ge1−xTx show the stripe-shaped regions due to the inhomogeneous concentration distributions of T ions. T2p XAS spectra indicate that T ions are mainly in the divalent states, and that they do not form pure metal clusters. This study reveals that Ge1−xTx crystals are chemically phase-separated, suggesting that the observed ferromagnetic ordering in Ge1−xTx arises from the magnetic properties of the T-rich Ge1−xTx phases.