Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
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DOI：
10.1063/1.2432946
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发表时间：
2007-01-15
影响因子：
4
通讯作者：
Nakagomi, Shinji
中科院分区：
文献类型：
--
作者：
Kokubun, Yoshihiro;Miura, Kasumi;Nakagomi, Shinji
采用溶胶-凝胶法在(0001)蓝宝石衬底上制备了β-Ga2O3薄膜。 X射线衍射表明，热处理温度高于600℃时，形成了β-Ga2O3多晶薄膜。当热处理温度高于900℃时，β-Ga2O3薄膜的晶格常数减小，带隙增大。基于溶胶-凝胶制备的 β-Ga2O3 薄膜的平面几何光电导探测器已被制造出来。他们仅对短于 270 nm 的波长表现出光响应，这对应于日盲区域。光谱响应的峰值波长取决于溶胶-凝胶过程中的热处理温度。 (c) 2007 年美国物理研究所。
beta-Ga2O3 thin films have been prepared on (0001) sapphire substrates by the sol-gel method. X-ray diffraction showed that beta-Ga2O3 polycrystalline films were formed at heat-treatment temperatures above 600 degrees C. With increasing heat-treatment temperature above 900 degrees C, the lattice constants of the beta-Ga2O3 films decreased, while the band gap increased. Planar geometry photoconductive detectors based on the sol-gel prepared beta-Ga2O3 thin films have been fabricated. They showed the photoresponse only for the wavelengths shorter than 270 nm, which correspond to the solar-blind region. The peak wavelength in the spectral response depended on the heat-treatment temperature in the sol-gel process. (c) 2007 American Institute of Physics.