Poly(3-methylthiophene)-coated electrodes: optical and electrical properties as a function of redox potential and amplification of electrical and chemical signals using poly(3-methylthiophene)-based microelectrochemical transistors
Poly(3-methylthiophene)-coated electrodes: optical and electrical properties as a function of redox potential and amplification of electrical and chemical signals using poly(3-methylthiophene)-based microelectrochemical transistors
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DOI：
10.1021/j100269a048
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发表时间：
1985-08
期刊：
影响因子：
--
通讯作者：
J. Thackeray;H. White;M. Wrighton
中科院分区：
文献类型：
--
作者：
J. Thackeray;H. White;M. Wrighton
摘要：报道了在乙腈/0.1M（n-Bu 4 N）ClO 4溶液中阳极生长的聚-3-甲基噻吩的光电性质随氧化还原电位的变化。聚-3-甲基噻吩可以通过氧化3-甲基噻吩生长并沉积在Au或Pt电极表面上。一对聚-3-甲基噻吩连接的微电极可以起到晶体管的作用，其中一个电极被认为是“源极”，另一个电极被认为是“漏极”，源极被称为溶液作为栅极。聚-3-甲基噻吩是固态场效应晶体管的沟道的类似物，因为其电导率根据电势变化100，000，000。聚-3-甲基噻吩的大的光学（300-800 nm）和电学变化发生在约100 nm之间。+0.3 V和大约+0.8 V vs. SCE。还原材料在490 nm处具有最大吸收，氧化材料在750 nm处具有最大吸收。光密度的变化与聚合物的电位在约100 - 1000 V之间变化时发生的电阻变化平行。+0.3左右。+0.8 V vs. SCE。1.5微米厚的聚-3-甲基噻吩膜的充电涉及约100微米。每单位投影面积的电荷比光滑的Pt电极多10，000倍，与导电聚合物的大的有效内表面积一致。
Abstract : Optical and electrical properties of anodically grown poly-3-methythiophene are reported as a function of redox potential in CH3CN/0.1M (n-Bu4N)ClO4. Poly-3-methylthiophene can be grown by the oxidation of 3-methylthiophene and deposited onto Au or Pt electrode surfaces. A pair of poly-3-methylthiophene-connected microelectrodes can function as a transistor where one of the electrodes is regarded as 'source' and the other as 'drain' with the source being referenced to the solution as a gate. The poly-3-methylthiophene is the analogue of the channel of a solid state field effect transistor, since its conductivity changes by 100,000,000 depending on the potential. Large optical (300-800 nm) and electrical changes for the poly-3-methylthiophene occur between approx. +0.3 V and approx. +0.8 V vs. SCE. The reduced material has an absorption maximum at 490 nm and the oxidized material has an absorption maximum at 750 nm. The optical density changes parallel the resistant changes that occur as the potential of the polymer changes between approx. +0.3 and approx. +0.8 V vs. SCE. The charging of a 1.5 micrometer thick film of poly-3-methylthiophene involves approx. 10,000 time more charge per unit of projected area then a smooth Pt electrode, consistent with a large effective internal surface area for the conducting polymer.