Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
复制标题
用于低功耗高速逻辑的低温半导体弹道输运
DOI：
10.1109/t-ed.1979.19671
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发表时间：
1979
影响因子：
3.1
通讯作者：
L. Eastman
中科院分区：
文献类型：
--
作者：
M. Shur;L. Eastman
在低温下，半导体中电子的平均自由程可能超过器件尺寸。在这种条件下，当电子传输为弹道传输时，计算了双端器件的电流电压特性、电位、电场和载流子分布。采用类似肖克利模型的方法分析了“弹道”场效应管的电流-电压特性。结果表明，在低电压下可以获得很高的漂移速度，从而在逻辑电路中实现高速度和低功耗的应用。例如，在77 K时，具有特征尺寸约为1微米或更小的GaAs逻辑器件将与约瑟夫森隧道逻辑门相媲美或更好。
At low temperatures, a mean free path of electrons in semiconductors may exceed device dimensions. Current-voltage characteristics, potentials, electrical field, and carrier distributions are calculated for a two-terminal device under such conditions when the electron transport is ballistic. Current-voltage characteristics of a "ballistic" FET are analyzed using an approach similar to the Shockley model. It is shown that very high drift velocities can be obtained at low voltages leading to high speed and low power consumption in possible applications in logic circuits. For example, GaAs logic devices with characteristic dimensions about a micrometer or less at 77 K will be comparable with or better than Josephson tunneling logic gates.