Fabrication and Raman scattering study of epitaxial VO2 films on MgF2 (001) substrates
Fabrication and Raman scattering study of epitaxial VO2 films on MgF2 (001) substrates
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DOI：
10.1063/1.4813442
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发表时间：
2013-07
影响因子：
4
通讯作者：
K. Shibuya;J. Tsutsumi;T. Hasegawa;A. Sawa
中科院分区：
文献类型：
--
作者：
K. Shibuya;J. Tsutsumi;T. Hasegawa;A. Sawa
研究了外延应变对在MgF2（001）衬底上生长的外延VO2薄膜金属绝缘体跃迁（MITs）的影响。在420℃下沉积的部分拉伸应变膜的MIT温度（TMI）为318 K，而在520℃下沉积的松弛膜的MIT温度（TMI）约为331 K。拉曼散射测量表明，外延应变影响绝缘阶段的V-V振动模式。由于V-V距离的缩短和V-V二聚体的平面内拉伸应变导致的扭转角度的减小，应变膜中的TMI降低。
Effects of epitaxial strain on metal–insulator transitions (MITs) of epitaxial VO2 films grown on MgF2 (001) substrates were examined. A partially tensile-strained film deposited at 420 °C showed an MIT temperature (TMI) of 318 K whereas that of a relaxed film deposited at 520 °C was about 331 K. Raman scattering measurements showed that the epitaxial strain affects the V–V vibration modes in the insulating phase. The TMI in the strained film is lower as a result of the shorter V–V distance and the reduced twisting angle of the V–V dimer caused by in-plane tensile strain.