Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
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DOI：
10.1063/1.2823606
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发表时间：
2007-12
影响因子：
4
通讯作者：
E. Toh;G. Wang;L. Chan;G. Samudra;Y. Yeo
中科院分区：
文献类型：
--
作者：
E. Toh;G. Wang;L. Chan;G. Samudra;Y. Yeo
本文讨论了硅锗异质结源极双栅隧穿场效应晶体管的器件物理和设计指导原则。采用二维器件模拟研究了SiGe scinSi异质结的位置对能带隧穿和器件性能的影响。它建立了带到带隧穿发生在距离源极区中的栅极边缘为1.4nm的距离。为了使SiGe的较窄带隙发挥主导作用，SiGe区和栅极之间的重叠应当使得电子的整个隧穿路径位于SiGe中。为了最大限度地利用SiGe中的高带间隧穿率，SiGe区和栅极之间需要有1.2nm的重叠。
The device physics and guiding principles for the design of the double-gate tunneling field-effect transistor with silicon-germanium (SiGe) heterojunction source are discussed. Two dimensional device simulations were employed to study the influence of the position of the SiGe∕Si heterojunction on band-to-band tunneling and device performance. It is established that band-to-band tunneling occurs at a distance of ∼4nm from the gate edge in the source region. In order for the narrower bandgap of SiGe to play a dominant role, the overlap between the SiGe region and the gate should be such that the whole tunneling path of the electrons is located in SiGe. To harness the maximum benefits of the high band-to-band tunneling rate in SiGe, an overlap of ∼2nm between the SiGe region and the gate would be required.