Towards ultrathin copper indium gallium diselenide solar cells: proof of concept study by chemical etching and gold back contact engineering
Towards ultrathin copper indium gallium diselenide solar cells: proof of concept study by chemical etching and gold back contact engineering
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DOI：
10.1002/pip.2162
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发表时间：
2012-08
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通讯作者：
Z. J. Li-Kao;N. Naghavi;F. Erfurth;J. Guillemoles;I. Gérard;A. Etcheberry;J. Pelouard;S. Collin;G. Voorwinden;D. Lincot
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作者：
Z. J. Li-Kao;N. Naghavi;F. Erfurth;J. Guillemoles;I. Gérard;A. Etcheberry;J. Pelouard;S. Collin;G. Voorwinden;D. Lincot
一种结合化学蚀刻和“剥离”工艺的创新方法，允许在CIGSe沉积后进行背接触处理，允许使用Au作为高反射CIGSe太阳能电池的背接触。Au背接触不会降低电池的其它参数，因为在CIGSe上实现了良好的欧姆性。与常规Mo背接触太阳能电池相比，通过背反射器增强的光捕获效应实现了重要的光电流增加，导致CIGSe厚度为0.4 µm时绝对效率增加+2.5%。该方法可用于进一步研究，以改善背侧的CIGSe太阳能电池。版权所有© 2012约翰威利父子有限公司.
An innovative approach combining chemical etching and a “lift‐off” process, which allows back contact processing after CIGSe deposition, permitted to use Au as a highly reflective back contact in ultrathin CIGSe solar cells. The Au back contact does not degrade the other parameters of the cell, as good ohmicity on CIGSe is achieved. An important photocurrent increase compared with regular Mo back contact solar cells is achieved by the enhanced light trapping effect due to the back reflector, leading to an absolute efficiency increase of +2.5% for a CIGSe thickness of 0.4 µm. This approach could be used for further investigations in improving the back side of ultrathin CIGSe solar cells. Copyright © 2012 John Wiley & Sons, Ltd.