High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.
High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.
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高功率倍频 GaInNAs 半导体盘激光器，发射波长 615 nm。
DOI：
10.1364/oe.15.003224
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发表时间：
2007
期刊：
影响因子：
3.8
通讯作者：
O. Okhotnikov
中科院分区：
文献类型：
--
作者：
A. Härkönen;J. Rautiainen;M. Guina;J. Konttinen;P. Tuomisto;L. Orsila;M. Pessa;O. Okhotnikov
报道了一种光泵腔内倍频GaInNAs/GaAs基半导体激光器，其波长为615 nm。该激光器工作在1230 nm的基本波长，并采用了BBO晶体的光转换为红色波长。在615 nm处获得了172 mW的最大输出功率。两个输出的组合功率为320 mW。利用腔内的薄玻璃标准具可将可见光发射波长调谐到4.5nm。
We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.