Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric HfO2
Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric HfO2
复制标题
DOI：
10.1109/led.2011.2177435
复制
发表时间：
2012-02-01
影响因子：
4.9
通讯作者：
Frey, Lothar
中科院分区：
文献类型：
--
作者：
Mueller, Johannes;Boescke, Tim S.;Frey, Lothar
我们报告的制造完全CMOS兼容的铁电场效应晶体管（FET）的铁电相稳定在10 nm薄的Si：HfO 2。这种金属-铁电-绝缘体-硅FET（MFIS）与多晶硅/TiN/Si：HfO 2/SiO2/Si栅堆叠的编程和擦除操作进行比较的瞬态开关行为的TiN基金属-铁电-金属（MFM）电容器。在MFM电容器的极化反转遵循铁电畴切换的特征时间和场依赖性，从而导致更高的切换速度与施加的电场增加。当实施到微金融信息系统结构中时，对材料进行了类似的观察。观察到非易失性开关下降到20 ns的脉冲宽度，产生的存储器窗口（MW）的1.2 V的栅极偏置或脉冲宽度的进一步增加导致电荷注入和降解的MW。长达10（6）s的保留测量表明保留时间超过10年。
We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si : HfO2. The program and erase operation of this metal-ferroelectric-insulator-silicon FET (MFIS) with poly-Si/TiN/Si : HfO2/SiO2/Si gate stack is compared to the transient switching behavior of a TiN-based metal-ferroelectric-metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to 10(6) s suggest a retention of more than ten years.