Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure
Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure
复制标题
DOI：
10.1063/1.4811443
复制
发表时间：
2013-07
影响因子：
3.2
通讯作者：
Juan Wang;Guo-wei Wang;Ying-qiang Xu;Jun-Liang Xing;W. Xiang;B. Tang;Yan Zhu;Z. Ren;Zhenhong He;Zhichuan Niu
中科院分区：
文献类型：
--
作者：
Juan Wang;Guo-wei Wang;Ying-qiang Xu;Jun-Liang Xing;W. Xiang;B. Tang;Yan Zhu;Z. Ren;Zhenhong He;Zhichuan Niu
采用分子束外延（MBE）技术在半绝缘GaAs衬底上生长出具有高电子迁移率的InAs/AlSb深量子阱（QW）结构。生长AlSb和Al0.75Ga0.25Sb缓冲层以适应InAs/AlSb QW有源区与GaAs衬底之间的晶格失配（7%）。透射电子显微镜显示界面突变，原子力显微镜测量显示表面光滑。优化了AlSb和Al0.75Ga0.25Sb缓冲液的生长条件。如图所示，Al0.75Ga0.25Sb作为缓冲层优于AlSb。具有最佳Al0.75Ga0.25Sb缓冲层的样品表面形貌光滑，均方根粗糙度为6.67 a。在室温下，电子迁移率高达27000 cm2/Vs，薄片密度为4.54 × 1011/cm2。
InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 A. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.