Ion Beam Mixing in Insulator Substrates
Ion Beam Mixing in Insulator Substrates
复制标题
绝缘体基底中的离子束混合
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
C. McHargue
中科院分区：
文献类型：
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作者：
C. McHargue
综述了涉及绝缘体衬底的离子束混合研究，重点关注热力学和热化学方面的考量。此类研究通常采用金属/绝缘体组合的双层结构。几乎没有长程物质迁移的证据。对于蓝宝石（单晶Al₂O₃）衬底，在室温下对金属膜和氧化物膜进行辐照时，仅检测到反冲混合。在825 - 900°C的温度下，出现反冲注入阳离子的“去混合”现象。非润湿金属膜的团聚表明在离子束的影响下发生了表面扩散。据报道，在SiC、Si₃N₄和SiO₂上的金属膜存在弹道混合。对于反应焓有利的体系，在界面处观察到离子束诱导的反应。有证据表明，级联混合区域中的化学效应决定了混合区中存在的相。
Abstract Studies of ion beam mixing involving insulator substrates is reviewed with an emphasis on thermodynamical and thermochemical considerations. Such studies generally have employed the bi-layer configuration of metal/insulator combinations. There is little evidence for long-range material transport. In the case of sapphire (single crystal Al2O3) substrates, only recoil mixing has been detected for both metal and oxide films irradiated at room temperature. “Demixing” of recoil-implanted cations is indicated at temperatures of 825–900°C. Agglomeration of non-wetting metal films suggests that surface diffusion occurs under the influence of the ion beam. Ballistic mixing has been reported for metal films on SiC, Si3N4 and SiO2. Ion beam-induced reactions are observed at the interfaces for systems in which the enthalpy of reaction is favorable. There is evidence that chemical effects in the cascade mixing regime determine the phases present in the mixed zone.