Digital etching of III-N materials using a two-step Ar/KOH technique
Digital etching of III-N materials using a two-step Ar/KOH technique
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使用两步 Ar/KOH 技术对 III-N 材料进行数字蚀刻
DOI：
10.1007/s11664-006-0137-6
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发表时间：
2006
影响因子：
2.1
通讯作者：
M. Feng
中科院分区：
文献类型：
--
作者：
D. Keogh;P. Asbeck;T. Chung;R. Dupuis;M. Feng
两步数字蚀刻技术，基于氩等离子体曝光，然后由0.2 M沸腾KOH表面处理，被证明是有效的蚀刻III-N材料。蚀刻的发生是由于以下事实：其深度可由氩反应离子蚀刻（RIE）等离子体控制的受损氮化物材料易于在加热的KOH溶液中去除，这已被证明用于GaN、AlGaN和InGaN。该过程被证明是高度线性的数字蚀刻周期，并能够产生光滑的表面形态。
A two-step digital etch technique, based on an argon plasma exposure followed by a 0.2 M boiling KOH surface treatment, is shown to be effective for etching III-N materials. Etching takes place as a result of the fact that damaged nitride material, whose depth can be controlled by the argon reactive ion etching (RIE) plasma, is susceptible to removal in heated solutions of KOH, which has been demonstrated for GaN, AlGaN, and InGaN. The process is shown to be highly linear across a number of digital etch cycles and capable of producing smooth surface morphologies.