Anomalous Nernst Effect in an L10-Ordered Epitaxial FePt Thin Film
Anomalous Nernst Effect in an L10-Ordered Epitaxial FePt Thin Film
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DOI：
10.1143/apex.5.093002
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发表时间：
2012-09-01
影响因子：
2.3
通讯作者：
Takanashi, Koki
中科院分区：
文献类型：
--
作者：
Mizuguchi, Masaki;Ohata, Satoko;Takanashi, Koki
研究了垂直磁化的L1(0)有序外延FePt(001)薄膜中的反常能斯特效应，并通过实验评估了FePt薄膜的反常能斯特系数和反常能斯特角。此外，通过有限元方法模拟了自旋霍尔器件中反常能斯特效应引起的电压。实验和模拟之间发现了很好的一致性。据透露，即使在纳米级设备中，也可以定量讨论反常的能斯特效应。 (C) 2012 日本应用物理学会
The anomalous Nernst effect in a perpendicularly magnetized L1(0)-ordered epitaxial FePt(001) thin film has been investigated, and the anomalous Nernst coefficient and the anomalous Nernst angle of the FePt thin film were experimentally evaluated. Furthermore, the voltage due to the anomalous Nernst effect in the spin-Hall device was simulated by the finite element method. A good agreement between the experiment and the simulation was found. It was revealed that the anomalous Nernst effect could be quantitatively discussed even in nanoscale devices. (C) 2012 The Japan Society of Applied Physics