STM observation and first-principles determination of Ge nanoscale structures on Si(111)
STM observation and first-principles determination of Ge nanoscale structures on Si(111)
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DOI：
10.1103/physrevb.75.085313
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发表时间：
2007-02
影响因子：
3.7
通讯作者：
Zhihui Qin;D. Shi;H. Ma;Hongjun Gao;A. S. Rao;Sanwu Wang;S. Pantelides
中科院分区：
文献类型：
--
作者：
Zhihui Qin;D. Shi;H. Ma;Hongjun Gao;A. S. Rao;Sanwu Wang;S. Pantelides
采用扫描隧道显微镜观察和第一原理量子力学计算来研究锗沉积时在 Si(111) 表面上形成的纳米级结构，覆盖范围约为 0.3 单层。在室温下，Ge原子形成宽度为1.5-6纳米的纳米团簇。退火后，纳米团簇变成二维岛，典型尺寸宽度约为 10 纳米。我们提出，退火或高 T 沉积导致 (7x7) 重建晶胞部分转变为未重建的 Si(111) 配置，其中 Ge 吸附原子位于 T-4 位点并形成 (root 3x root 3)R30 度重建。
Scanning tunneling microscopy observations and first-principles quantum mechanical calculations were employed to investigate the nanoscale structures formed on Si(111) surfaces upon germanium deposition at a coverage of similar to 0.3 monolayer. At room temperature, Ge atoms form nanoclusters with sizes of 1.5-6 nanometers in width. After annealing, the nanoclusters become two-dimensional islands with typical size of similar to 10 nanometers in width. We propose that the annealing or high-T deposition results in a partial transformation of (7x7) reconstructed unit cells to unreconstructed Si(111) configurations on which the Ge adatoms reside at the T-4 sites and form a (root 3x root 3)R30 degrees reconstruction.