Deep drawing of tungsten plates for structural divertor applications in future fusion devices
Deep drawing of tungsten plates for structural divertor applications in future fusion devices
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DOI：
10.1016/j.fusengdes.2011.07.011
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发表时间：
2011-12
影响因子：
1.7
通讯作者：
J. Reiser;M. Rieth;B. Dafferner;Siegfried Baumgärtner;R. Ziegler;A. Hoffmann
中科院分区：
文献类型：
--
作者：
J. Reiser;M. Rieth;B. Dafferner;Siegfried Baumgärtner;R. Ziegler;A. Hoffmann
用于未来聚变反应堆的氦冷偏滤器的参考设计使用了数十万个指状单元，这些指状单元由称为套管的加压结构部件组成。由于需要大量的零件，顶针必须通过大规模生产技术（如深拉）制造。由于顶针是一个承受100 bar内压的加压部件，因此对材料的要求很高，这意味着它需要最好的钨材料。以前的工作表明，纯钨材料具有最好的冲击性能，并且必须优先于其他市售的钨材料，例如掺杂钾或用氧化物如氧化镧强化的钨材料。此外，必须考虑晶界的固有弱点，这需要晶粒与部件的轮廓对齐（晶界对齐）。本文叙述了在600°C高真空中成功地拉深1mm厚的钨板。在这样做时，顶针可以加工成具有遵循轮廓的晶粒。此外，通过室温和600°C下的拉伸试验以及考虑各向异性材料行为的夏比试验，对1mm钨板进行了表征。
The reference design of a helium cooled divertor for future fusion reactors makes use of hundreds of thousands of finger units consisting of a pressurized structural part called a thimble. Due to the high number of parts needed, the thimble has to be fabricated by mass production techniques like deep drawing. As the thimble is a pressurized part exposed to an internal pressure of 100bar, the demands for the material are high, which means that it requires the best available tungsten material. Former work has shown that pure tungsten material has the best impact properties and has to be preferred over other commercially available tungsten materials, such as that doped with potassium or strengthened with oxides like lanthanum oxide. Furthermore the inherent weakness of the grain boundaries has to be taken into account, which requires the need for grains that are aligned to the contour of the part (grain boundary alignment). This paper describes the successful deep drawing of a 1mm tungsten plate in high vacuum at 600°C. In doing this, a thimble can be machined with grains that follow the contour. Furthermore the characterization of a 1mm tungsten plate is conducted by tensile tests at room temperature and at 600°C, as well as by Charpy tests taking into account the anisotropic material behaviour.