Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements
Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements
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DOI：
10.1063/1.3624757
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发表时间：
2011-09
影响因子：
3.2
通讯作者：
M. Perego;G. Seguini
中科院分区：
文献类型：
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作者：
M. Perego;G. Seguini
X 射线光电子能谱 (XPS) 测定价带偏移 (VBO) 通常使用所谓的 Kraut 方法，该方法是为半导体/半导体异质结中的 VBO 测定而开发的。尽管作为该方法基础的物理模型可以安全地扩展到介电/半导体 (D/S) 异质结，但在这些系统中，由于 X 射线轰击期间 D/S 界面处产生的差异充电现象，有必要仔细评估实验结果。因此，VBO 的精确测定需要对能量标度进行精确校准，以消除 XPS 测量过程中氧化物逐渐充电引起的伪影。在这项工作中，详细分析了电子束蒸发的非晶 HfO2 薄膜和 Si 衬底之间的能带排列。由于基于 HfO2 的电介质已经实现，因此选择 HfO2/Si 异质结作为本研究的原型...
The determination of the valence band offset (VBO) by x-ray photoelectron spectroscopy (XPS) is commonly performed using the so-called Kraut’s method that was developed for VBO determination in semiconductor/semiconductor heterojunctions. Although the physical model, which is the basis of the method, can be safely extended to dielectric/semiconductor (D/S) heterojunctions, in these systems a careful evaluation of the experimental results is necessary due to the differential charging phenomena originating at D/S interface during x-ray bombardment. As a consequence, precise determination of the VBO requires an accurate calibration of the energy scale in order to remove artifacts induced by the progressive charging of the oxide during the XPS measurement. In this work a detailed analysis of the band alignment between e-beam evaporated amorphous HfO2 films and Si substrates is reported. The HfO2/Si heterojunction was selected as a prototype for this study since HfO2 based dielectrics have already been impleme...