Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors
Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors
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DOI：
10.35848/1882-0786/ac68cf
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发表时间：
2022-06-01
影响因子：
2.3
通讯作者：
Moraru, Daniel
中科院分区：
文献类型：
--
作者：
Jupalli, Taruna Teja;Debnath, Ananta;Moraru, Daniel
从施主基单电子晶体管的高温(室温)工作的角度，比较研究了在N(D)接近1×10(18)和2×10(20)cm(-3)两种掺杂浓度下，具有磷掺杂沟道的纳米硅晶体管。实验表明，高N(D)器件具有较大的隧道势垒高度，可以提供室温单电子隧穿工作，而低N(D)器件的工作温度限制在100K左右。对施主-原子随机分布的数值模拟表明，施主聚集在量子点的形成中起主导作用，并表明由三个以上施主组成的团簇负责室温操作。
From the viewpoint of high- (room-) temperature operation of donor-based single-electron transistors, we make a comparative study of nano-scale silicon-on-insulator transistors with phosphorus-doped channels for two dopant-concentration regimes: N (D) approximate to 1 x 10(18) and 2 x 10(20 )cm(-3). We experimentally show that the high-N (D) devices can provide room-temperature single-electron tunneling operation owing to a large tunnel-barrier height, while operation temperature is limited to about 100 K for the low-N (D) devices. Numerical simulations of random donor-atom distributions indicate that donor clustering plays a dominant role in the formation of quantum dots, and suggests that clusters comprising of more-than-three donors are responsible for room-temperature operation.