Room-temperature deposition of SiNx using ECR-PECVD for IIIV semiconductor microelectronics in lift-off technique
Room-temperature deposition of SiNx using ECR-PECVD for IIIV semiconductor microelectronics in lift-off technique
复制标题
使用 ECR-PECVD 进行 IIIV 半导体微电子剥离技术的 SiNx 室温沉积
DOI：
10.1016/0022-3093(95)00160-3
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发表时间：
1995
影响因子：
3.5
通讯作者：
F. Tegude
中科院分区：
文献类型：
--
作者：
A. Wiersch;C. Heedt;S. Schneiders;R. Tilders;F. Buchali;W. Kuebart;W. Prost;F. Tegude
报道了用于电子应用的 InP 衬底上氮化硅的室温沉积。使用配备有电子回旋共振源的等离子体增强化学气相沉积装置。选择在氦气中稀释的分子氮和硅烷作为前体。介电薄膜通过光学光刻和剥离技术来定义。 C-f 测量显示介电常数约为 9，损耗因数 tan δ = 3 × 10−1(f = 10 kHz)，而击穿场为 2 MV/cm (I = 250 μA/mm2)。在电应力和热应力下，损耗因数分别显着提高了一个数量级以上，这与傅里叶变换红外光谱测量的 SiH 或 NH 键的变化无关。研究了氮化硅沉积对 InAlAs InGaAs 异质结构场效应晶体管电性能的影响。最显着的变化是栅极漏电流改善了 90%，而其他直流和射频特性保持不变。
Room-temperature deposition of silicon-nitride on InP-substrates for electronic applications is reported. A plasma enhanced chemical vapour deposition apparatus equipped with an electron cyclotron resonance source was used. Molecular nitrogen and silane diluted in helium are chosen as precursors. The dielectric films are defined by means of optical lithography and lift-off technique. C-f measurements reveal a dielectric constant of about 9 and a dissipation factor tan δ = 3 × 10−1(f = 10 kHz) while the breakdown field is 2 MV/cm (I = 250 μA/mm2). A strong improvement of the dissipation factor by more than one order of magnitude under both electrical and thermal stress, respectively, has been observed which could not be related to a variation of SiH or NH bonds measured by Fourier transformed infrared spectroscopy. The influence of silicon-nitride deposition on the electrical properties of an InAlAs InGaAs heterostructure field-effect transistor is investigated. The most significant change is found as an improvement of gate leakage current by 90% while other dc- and rf-properties remain unchanged.