Growth Process of Vacuum Deposited Copper Phthalocyanine Thin Films on Rubbing-Treated Substrates
Growth Process of Vacuum Deposited Copper Phthalocyanine Thin Films on Rubbing-Treated Substrates
复制标题
摩擦处理基材上真空沉积铜酞菁薄膜的生长过程
DOI：
10.1143/jjap.42.7520
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发表时间：
2003
影响因子：
1.5
通讯作者：
H. Takezoe
中科院分区：
文献类型：
--
作者：
M. Ofuji;K. Inaba;K. Omote;H. Hoshi;Y. Takanishi;K. Ishikawa;H. Takezoe
利用原子力显微镜(AFM)和X射线衍射仪(X射线衍射仪)对摩擦表面生长的铜酞菁(CuPc)薄膜不同生长阶段的表面形貌、晶格间距和微晶尺寸进行了研究。薄膜由许多沿摩擦方向延伸的细小微晶组成，这是由于沿同一方向的α柱状结构。原子力显微镜显示，晶区的长径比随着薄膜的生长而增加，这意味着平行于衬底的两个不同方向的晶体生长速率的比率发生了变化。X-射线衍射仪显示出两种柱间方向的明显差异。分子间距在生长初期沿厚度方向扩展，而在横向(c轴)方向上保持不变。厚度方向的微晶尺寸始终与薄膜厚度相当，而c轴方向的尺寸没有变化。
Surface morphology, crystal lattice spacings and crystallite size of copper phthalocyanine (CuPc) thin films grown on rubbed surfaces were probed at different stages of growth, by means of atomic force microscopy (AFM) and X-ray diffraction (XRD). The films consisted of many slender crystallites extending along the rubbing direction, due to the α-type columnar structure along the same direction. AFM revealed that the aspect ratio of crystal domains increases as the films grow, implying a change in the ratio of crystal growth rates in the two different directions parallel to the substrates. XRD demonstrated marked differences in the two intercolumnar directions. The molecular spacing is expanded in the thickness direction at the initial stage of growth, while it remains constant throughout the growth in the lateral (c-axis) direction. The crystallite size in the thickness direction is always comparable to the film thickness, while the size in the c-axis direction shows no change.