Enhanced persistent luminescence via Si4+ co-doping in Y3Al2Ga3O12:Ce3+,Yb- (3+),B3+
Enhanced persistent luminescence via Si4+ co-doping in Y3Al2Ga3O12:Ce3+,Yb- (3+),B3+
复制标题
通过 Si4 共掺杂增强 Y3Al2Ga3O12:Ce3 ,Yb- (3 ),B3 中的持久发光
DOI：
10.1016/j.jlumin.2020.117190
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发表时间：
2020
影响因子：
3.6
通讯作者：
Liu Quanlin
中科院分区：
文献类型：
--
作者：
Zhou D;an;Song Zhen;Zhou Hao;Liu Quanlin
持续发光荧光粉具有长持续时间和高发光强度，在安全标牌和储能方面的应用引起了广泛关注。在此，我们通过常规固相反应成功地将非等价离子Si4+引入到石榴石荧光粉Y3Al2Ga3O12:Ce3+,Yb3+,B3+中的Al3+位点上。可见光辐射后，在 0.32 mcd/m2 阈值下，持续发光持续时间在 40 小时内显着增强，几乎比不含 Si4+ 的样品长两倍。此外，持续发光的余辉发射强度也得到改善。我们证实，在Si4+的配合下，合成的荧光粉不仅具有更深的陷阱深度，而且具有更宽的陷阱分布和更高的陷阱密度。初始上升方法是通过在 432 nm 激发后在不同温度下进行一系列热致发光分析来实现的，这证明了从 0.47 到 1.11 eV 的精确陷阱分布。最后，使用 Y3Al2Ga3O12 真空参考结合能的示意性能量图描述了持久发光的机制。
Persistent luminescence phosphors with long duration and high emitting intensity have attracted considerable attention for applications in safety signage and energy storage. Herein, we successfully introduce non-equivalent ions Si4+into Al3+sites in the garnet phosphor Y3Al2Ga3O12:Ce3+,Yb3+,B3+by conventional solid-state reaction. The persistent luminescence duration has been dramatically enhanced over 40 h at the 0.32 mcd/m2threshold value after visible light radiation, almost twice longer than the sample without Si4+. Moreover, the afterglow emission intensity of the persistent luminescence is also improved. We confirm that the synthesized phosphors possess not only deeper trap depth but also wider trap distribution and higher trap density after the cooperation of Si4+. The initial rise approach is used by performing a series of thermoluminescence analyses at various temperatures after 432 nm excitation, which demonstrates the exact trap distribution from 0.47 to 1.11 eV. At the end, the mechanism of the persistent luminescence is depicted using a schematic energy diagram of the vacuum referred binding energy of Y3Al2Ga3O12.