Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope
Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope
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使用扫描隧道显微镜对 GaAs 中的单一 Fe 杂质进行核态操控
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
P. Koenraad
中科院分区：
文献类型：
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作者：
J. Bocquel;V. Kortan;C. Şahin;R. Campion;B. Gallagher;M. Flatté;P. Koenraad
我们证明扫描隧道显微镜尖端可用于操纵嵌入 GaAs 中的单个 Fe 离子的紧密束缚核心（d 电子）态。增加尖端样品电压会从单个 Fe 的核心去除 1 个 d 电子，将掺杂剂从 (Fe2+)(-) 电离受主态改变为 (Fe3+)(0) 等电子态，从而改变自旋矩并显着改变表面地形图中测得的局部电子对比度。 Fe 核心 d 态之间内部跃迁的证据也可以在地形图中看到，其中暗各向异性特征是由两条路径之间的干扰而出现的：直接尖端样本隧道效应和激发 Fe 掺杂剂的 d 态核心激子的隧道效应。
We demonstrate that a scanning tunneling microscope tip can be used to manipulate the tightly bound core (d-electron) state of single Fe ions embedded in GaAs. Increasing tip-sample voltage removes one d electron from the core of a single Fe, changing the dopant from the (Fe2+)(-) ionized acceptor state to the (Fe3+)(0) isoelectronic state, which alters the spin moment and dramatically modifies the measured local electronic contrast in topographic maps of the surface. Evidence of internal transitions among the d states of the Fe core is also seen in topographic maps where dark anisotropic features emerge from the interference between two paths: the direct tip-sample tunneling and tunneling which excites a d-state core exciton of the Fe dopant.