Sputtering yield and radiation damage by neutral beam bombardment
Sputtering yield and radiation damage by neutral beam bombardment
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中性束轰击的溅射产额和辐射损伤
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
S. Nishimatsu
中科院分区：
文献类型：
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作者：
T. Mizutani;S. Nishimatsu
为了阐明离子束蚀刻和中性束蚀刻之间的差异，使用通过电荷交换反应获得的低能（100-1000 eV）Ne 0中性束来轰击Cu、Si和SiO2表面。Cu和Si的溅射产额与Ne ~+的溅射产额相同。Ne ~（0+）溅射SiO_2的产额略小于Ne ~+。据信，电子溅射机制在这些低离子能量下这些材料的溅射中仅起很小的作用。C-V测量结果表明，由Ne 0中性束轰击SiO2/Si结构所引起的辐射损伤量明显小于由Ne+离子束所引起的辐射损伤量。当Ne+剂量增加时，平带电压偏移增加，并且Si上的薄SiO2膜最终击穿。在Ne 0中性轰击中，平带电压偏移随着剂量的增加而饱和，并且没有发生SiO2的击穿。假设在中性束轰击中，SiO_2的表面电位是有限的。
To clarify the difference between ion beam etching and neutral beam etching, a low‐energy (100–1000 eV) Ne0 neutral beam obtained by charge exchange reaction has been used to bombard Cu, Si, and SiO2 surfaces. The sputtering yields of Cu and Si by Ne0 have been found to be the same as those by Ne+. The sputtering yield of SiO2 by Ne0 is slightly smaller than that by Ne+. It is believed that electronic sputtering mechanisms play only a small role in the sputtering of these materials at these low ion energies. C–V measurements show that the amount of radiation damage caused by Ne0 neutral beam bombardment of the SiO2/Si structure is significantly less than that by a Ne+ ion beam. When the Ne+ dosage increases, the flat‐band voltage shift increases and the thin SiO2 films on Si eventually break down. In Ne0 neutral bombardment, the flat‐band voltage shift saturates with increasing dosage and no breakdown of SiO2 occurs. It is assumed that, in neutral beam bombardment, the surface potential of SiO2 is limited...