Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3
Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3
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DOI：
10.1002/pssb.200565208
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发表时间：
2006-06
期刊：
影响因子：
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通讯作者：
Y. Kumagai;K. Takemoto;J. Kikuchi;Takahiro Hasegawa;H. Murakami;A. Koukitu
中科院分区：
文献类型：
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作者：
Y. Kumagai;K. Takemoto;J. Kikuchi;Takahiro Hasegawa;H. Murakami;A. Koukitu
用AlCl3和NH3对氮化铝的氢化物气相外延(HVPE)进行了热力学分析。无论使用何种载气，当输入V/III比大于1时，与AlN平衡的含Al气体物种[AlCl3、AlCl2、AlCl2和(AlCl3)2]在5 0 0~15 0 0℃温度范围内的分压明显较低。这意味着AlN生长的驱动力(ΔPAL)几乎等于AlCl3的输入分压，这与GaN的高压外延有很大的不同。计算的生长速率与实验生长速率之间的良好一致性表明，AlN的HVPE是受热力学控制的。(2006 Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl3 and NH3 was performed. Regardless of the carrier gas used, partial pressures of Al‐containing gaseous species [AlCl3, AlCl2, AlCl and (AlCl3)2] in equilibrium with AlN are significantly low in the temperature range of 500–1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (ΔPAl) becomes almost equal to the input partial pressure of AlCl3, which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)