Magnetic spin excitations in Mn doped GaAs: a model study
Magnetic spin excitations in Mn doped GaAs: a model study
复制标题
Mn 掺杂 GaAs 中的磁自旋激发：模型研究
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
G. Bouzerar
中科院分区：
文献类型：
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作者：
A. Chakraborty;R. Bouzerar;G. Bouzerar
摘要
我们提供了一个定量的理论模型研究的动态磁性能的最佳退火Ga 1 −xMnxAs。该模型已被证明可以准确地再现Ga 1-xMnxAs的居里温度。在这里，我们表明，所计算的自旋刚度是在良好的协议与从头计算为基础的研究。此外，一个整体良好的协议也发现与现有的实验数据。我们还评估了磁振子的态密度和典型的态密度，从“迁移率边缘”，分离的扩展从本地化的磁振子状态，被确定。该模型的力量在于它的能力，被推广到广泛的一类稀磁半导体材料，因此它的桥梁之间的差距差距的第一原理计算和基于模型的研究。
Abstract
We provide a quantitative theoretical model study of the dynamical magnetic properties of optimally annealed Ga1−xMnxAs. This model has already been shown to reproduce accurately the Curie temperatures for Ga1−xMnxAs. Here we show that the calculated spin stiffness are in excellent agreement with those which were obtained from ab-initio based studies. In addition, an overall good agreement is also found with available experimental data. We have also evaluated the magnon density of states and the typical density of states from which the“mobility edge”, separating the extended from localized magnon states, was determined. The power of the model lies in its ability to be generalized for a broad class of diluted magnetic semiconductor materials, thus it bridges the gap between first principle calculations and model based studies.