A Generalized Tunneling Formula for Quantum Device Modeling

A Generalized Tunneling Formula for Quantum Device Modeling
复制标题

量子器件建模的广义隧道公式

DOI：
10.1155/1998/84503
复制
发表时间：
1998
期刊：
VLSI Design
影响因子：
--
通讯作者：
W. Frensley
W. Frensley
中科院分区：
--
文献类型：
--
作者：
R. Lake;Gerhard Klimeck;R. Bowen;D. Jovanovic;P. Sotirelis;W. Frensley

文献摘要

被引文献

相似文献

广义隧穿公式和简单的接触展宽模型对大多数RTD结构都给出了令人惊讶的好结果。它的速度和标准的相干隧道模拟器一样快，而且用途更广。它很容易推广到多波段和多维模型。描述了该理论的多带推广和光学势的影响。
The generalized tunneling formula with the simple model for the broadening in the contacts gives surprisingly good results for the majority of RTD structures. It is just as fast as the standard coherent tunneling simulators and much more versatile. It is easily generalized to multi-band and multidimensional models. The multi-band generalization of the theory and the effect of the optical potential are described.