Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes
Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes
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DOI：
10.1063/1.3238361
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发表时间：
2009-09-28
影响因子：
4
通讯作者：
Ono, Teruo
中科院分区：
文献类型：
--
作者：
Delmo, Michael P.;Kasai, Shinya;Ono, Teruo
我们发现，在非晶硅器件中的大的正磁阻可以通过施加在非欧姆输运机制中的电流来控制。实验结果表明，在该区域载流子输运主要受空间电荷效应控制，磁电阻效应大大增强。我们提出了一种基于硅中空间电荷感生的磁阻效应的器件概念，这种磁阻效应由电流和磁场控制，看起来与场效应晶体管的特性相似。(C)2009年美国物理学会。[doi：10.1063/1.3238361]
We show that the large positive magnetoresistance in nonmagnetic silicon devices can be controlled by a current applied in the non-Ohmic transport regime. The experimental results indicate that the carrier transport in this regime is dominated by the space-charge effect, where the magnetoresistance effect is greatly enhanced. We propose a device concept based on the space-charge-induced magnetoresistance effect in silicon that is controlled by both the current and the magnetic field, which looks similar to the characteristics of the field-effect transistors. (C) 2009 American Institute of Physics. [doi:10.1063/1.3238361]