Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors
Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors
复制标题
用于局部门控场效应晶体管的单壁碳纳米管纳米网通道的生物制造
作者：
H. Byeon;Woo;Wonbin Kim;S. Kim;Woong Kim;H. Yi
单壁碳纳米管(SWNTs)具有高导电性、高载流子迁移率和机械柔性等优异的器件特性，是场效应晶体管(FETs)等纳米电子器件的重要发展方向之一。FET的局部化门控几何测量实现了有源通道的单独寻址，并通过更薄的高k值介质层实现了更好的静电性。为了实现单壁碳纳米管的局域化浇注，高精度地将具有可控纳米结构和功能的单壁碳纳米管限定在所需的位置上变得至关重要。在这里，我们展示了结合微制造工艺的生物模板化方法可以成功地为局域有源器件(如局部底栅极场效应管)制造纳米结构的单壁碳纳米管沟道。利用与单壁碳纳米管具有很强结合能力的M13噬菌体，在溶液中组装了一个大规模的单壁碳纳米管纳米网状结构网络，并通过负光刻和等离子体刻蚀工艺定义了微米级的纳米网格通道。这种生物制造方法制造出具有显著可控纳米结构的局部底栅极场效应管，并成功地实现了未分选的单壁碳纳米管的半导体行为。此外，局域选通方案还提高了器件的工作电压和离子/关断比等性能。我们相信，我们的方法为利用纳米电子材料制造电子器件提供了一种有用的综合方法，在这些应用中，可调的电学性能、机械灵活性、环境稳定性和化学稳定性是至关重要的。
Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and Ion/Ioff ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.
影响因子：
10.8
作者：
Yi H;Ghosh D;Ham MH;Qi J;Barone PW;Strano MS;Belcher AM
通讯作者：
Belcher AM