Direct deposition of polycrystalline CdTe films on the Medipix readout chip and evaluation of layer quality and imaging results
Direct deposition of polycrystalline CdTe films on the Medipix readout chip and evaluation of layer quality and imaging results
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DOI：
10.1109/nssmic.2014.7431269
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发表时间：
2014-11
期刊：
影响因子：
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通讯作者：
A. Vogt;S. Schutt;F. Fischer;C. Disch;S. Procz;Y. Lu;M. Fiederle
中科院分区：
文献类型：
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作者：
A. Vogt;S. Schutt;F. Fischer;C. Disch;S. Procz;Y. Lu;M. Fiederle
碲化镉（CdTe）在医学X射线成像和辐射探测中用作光子吸收层。多晶CdTe和一系列背接触材料已被直接沉积在Medipix读出芯片上，以及通过物理气相沉积在硅衬底上。整个结构的研究相对于膜序列的电性能。生长发生在一个改进的MBE系统中，允许CdTe生长速率高达6 μm/h。由于该工艺允许多种源材料的蒸发，因此可以通过沉积CdTe吸收剂层，然后通过由Te、Sb 2 Te 3和Au/Pt组成的背接触序列来组装整个检测器。为了研究沉积膜的成分和质量，已经进行了光学和扫描电子显微镜以及X射线衍射测量。对于电特性，测定电阻率和暗电流。
Cadmium telluride (CdTe) is used as a photon absorber layer in medical X-ray imaging and radiation detection. Polycrystalline CdTe and a sequence of back contact materials have been directly deposited on the Medipix readout chip as well as on silicon substrates by physical vapor deposition. The whole structure is investigated with respect to the electrical properties of the film sequence. The growth takes place in a modified MBE system allowing CdTe growth rates up to 6 μm/h. Because this process allows evaporation of multiple source materials an entire detector can be assembled by depositing the CdTe absorber layer, followed by a back contact sequence consisting of Te, Sb2Te3 and Au/Pt. In order to study composition and quality of the deposited films, optical and scanning electron microscopy as well as X-ray diffraction measurements have been carried out. For electrical characterization resistivity and dark current were determined.