Synergy between Fermi Level of Graphene and Morphology of Polymer Film Allows Broadband or Wavelength‐Sensitive Photodetection
Synergy between Fermi Level of Graphene and Morphology of Polymer Film Allows Broadband or Wavelength‐Sensitive Photodetection
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DOI：
10.1002/admi.202100770
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发表时间：
2021-09
影响因子：
5.4
通讯作者：
Miao Yu;Yu Chen;Yong-Gang Chen;Zhi-Yong Yang;Weifeng Zhang;G. Yu
中科院分区：
文献类型：
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作者：
Miao Yu;Yu Chen;Yong-Gang Chen;Zhi-Yong Yang;Weifeng Zhang;G. Yu
通过简单的方法有目的地调节聚合物/石墨烯（G）杂化膜的光电探测性能并了解其内在机理对于开发相关器件具有重要意义。在此，通过简单的热处理，聚合物/G薄膜的光探测特性成功地从宽带调谐到红外/紫外敏感，为不同的需求提供了可选的工作模式。通过原子力显微镜、扫描电子显微镜、掠入射广角X射线散射、场效应晶体管器件和密度泛函理论计算，详细表征了聚合物/G杂化物的形态和电子/光电探测性能。结果表明，G的费米能级和聚合物膜的形貌之间的协同作用是负责不同的辐射敏感性的变化。前者改变了载流子迁移的能垒，而后者改变了聚合物薄膜对特定光的吸收能力。因此，在这项工作中，除了提出一种适用于不同应用的多模光电探测器件之外，还揭示了性能改变背后的内在机制以及简单热处理对聚合物/G器件调谐活动的强大能力，这为以简单合理的方法开发高效的光敏器件提供了有价值的支持。
Deliberately tuning the photodetecting performances of polymer/graphene (G) hybrid films through a simple approach and understanding its underlying mechanisms are of significance for developing related devices. Herein, photodetecting features of polymer/G films are successfully tuned from broadband to IR/UV sensitive through a simple thermal treatment, providing optional working modes for varied demands. The morphologies and electronic/photodetecting properties of polymer/G hybrids are characterized in detail through atomic force microscopy, scanning electron microscopy, grazing‐incident wide angle X‐ray scattering, field effect transistor devices, and density functional theory calculations. The results suggest that the synergetic effect between Fermi level of G and morphologies of polymer film is responsible for the altered sensitivities to different radiations. The former factor shifts the energy barrier of charge carrier transferring for photocurrent generation, while the latter modifies the absorption capabilities of polymer films to the specific lights. Thus, in this work, besides proposing an in‐principle multimode photodetecting device for different applications, the intrinsic mechanisms behind the performance modifications and the robust capabilities of simple thermal treatments on tuning activities of polymer/G devices are revealed as well, which provide valuable supports for developing efficient photosensing devices in a facile and rational approach.