High‐Speed Nano‐Processing with Cluster Ion Beams
High‐Speed Nano‐Processing with Cluster Ion Beams
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DOI：
10.1063/1.2401498
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发表时间：
2006-12
期刊：
影响因子：
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通讯作者：
T. Seki;J. Matsuo
中科院分区：
文献类型：
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作者：
T. Seki;J. Matsuo
气体团簇离子束工艺在光子晶体、薄膜晶体管(TFT)和微电子机械系统(MEMS)等纳米技术器件中具有很高的材料加工潜力。为了制作这种器件，需要用高速、低损伤和超光滑的工艺来刻蚀靶材。利用高能团簇离子束实现了超高速溅射。我们一直在多晶硅TFT中使用这种技术。利用激光退火法在多晶硅薄膜上形成了许多丘状结构，导致器件退化。当激光晶化多晶硅薄膜被团簇离子束照射时，可以选择性地刻蚀出较高的丘陵，并且可以用低离子剂量对多晶硅薄膜进行表面处理。利用团簇离子束实现了高速纳米加工。
The gas cluster ion beam process has a high potential for material processing in nano‐technology devices, such as photonic crystals, thin film transistors (TFTs) and micro‐electromechanical systems (MEMS). In order to fabricate the devices, one needs to etch target materials with a high‐speed, low‐damage and ultra‐smooth process. Extremely high rate sputtering was realized by high‐energy cluster ion beam. We have been using this technique for poly‐Si TFTs. There are many hillocks on poly‐Si films formed by using a laser anneal technique, and they cause degradation of devices. When the laser crystallized poly‐Si film was irradiated with cluster ion beam, the higher hillocks could be etched selectively and the surfaces of poly‐Si films could be processed with low ion dose. High‐speed nano‐processing was realized by cluster ion beam.