STUDY OF THE OPTICAL TRANSITIONS IN ELECTRODEPOSITED CUINSE2 THIN FILMS
STUDY OF THE OPTICAL TRANSITIONS IN ELECTRODEPOSITED CUINSE2 THIN FILMS
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DOI：
10.1063/1.347734
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发表时间：
1991
影响因子：
3.2
通讯作者：
J. Herrero;C. Guillén
中科院分区：
文献类型：
--
作者：
J. Herrero;C. Guillén
电沉积的cuinse2薄膜的光学遗憾是通过在400至2000 nm的波长范围内的正常发射率的测量透射率和反射率确定的是ega = 0.96 eV和一个禁止的直接过渡，其差距为EGF = 1.38 eV。 °C，在1.1 eV以下的能量下观察到光吸收的降低。未观察到禁止直接过渡。
Optical absorption coefficients of electrodeposited CuInSe2 thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 400 to 2000 nm. As‐deposited CuInSe2 is found to be a direct‐gap semiconductor with an allowed direct transition whose gap energy is Ega= 0.96 eV and a forbidden direct transition whose gap energy is Egf= 1.38 eV. After heat treatment of the films at 400 °C, a decrease in the optical absorption was observed at energies below 1.1 eV. Heat‐treated films showed an allowed direct transition with E’ga=1.00 eV, close to the value for as‐deposited samples, but in this last case the forbidden direct transition was not observed.