Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
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DOI：
10.1063/1.4946828
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发表时间：
2016-04
影响因子：
3.2
通讯作者：
M. Lamprecht;C. Grund;B. Neuschl;K. Thonke;Z. Bryan;R. Collazo;Z. Sitar
中科院分区：
文献类型：
--
作者：
M. Lamprecht;C. Grund;B. Neuschl;K. Thonke;Z. Bryan;R. Collazo;Z. Sitar
We report on a defect related luminescence band at 2.4 eV in aluminum nitride bulk crystals, for which we find strong indications to be related to silicon DX centers. Time resolved photoluminescence spectroscopy using a sub-bandgap excitation reveals two different recombination processes with very long decay times of 13 ms and 153 ms at low temperature. Based on the results of temperature and excitation dependent photoluminescence experiments, the process with the shorter lifetime is assigned to a donor-acceptor pair transition involving the shallow silicon donor state, which can be emptied with a thermal dissociation energy of 65 meV. The slower process with a thermal quenching energy of 15 meV is assigned to the slightly deeper Si DX state known from electron paramagnetic resonance experiments, which is transferred back to the shallow donor state.
