Enhancement of Semiconductor Wafer Cleaning by Chelating Agent Addition
Enhancement of Semiconductor Wafer Cleaning by Chelating Agent Addition
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DOI：
10.1149/1.1391273
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发表时间：
2001-09
影响因子：
3.9
通讯作者：
G. W. Gale;D. Rath;E. I. Cooper;Scott A. Estes;H. Okorn-Schmidt;Jeffrey A. Brigante;R. Jagannathan;G. Settembre;Eddie Adams
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文献类型：
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作者：
G. W. Gale;D. Rath;E. I. Cooper;Scott A. Estes;H. Okorn-Schmidt;Jeffrey A. Brigante;R. Jagannathan;G. Settembre;Eddie Adams
为了实现环境和成本效益，期望从其历史SC 1 + SC2组合减少RCA清洁顺序，其中颗粒去除SC 1溶液沉积某些金属，从而需要金属去除SC2。一种方法是将螯合剂添加到SC 1中。进行了添加络合剂1，2-环己二胺四乙酸（CDTA）的SCI溶液的广泛测试。研究表明，CDTA在SC 1溶液中比其他络合剂更稳定，有助于显着延长HAT寿命。此外，与SC2相比，具有CDTA的SC 1溶液显示出能够从污染的晶片中去除大量金属，并防止金属沉积。一个例外是铝，即使加入大量的CDTA，铝也会从SC 1中存款，但可以通过随后的稀（1000：1）H2 O：HCl步骤除去。
To realize environmental and cost benefits it is desirable to reduce the RCA cleaning sequence from its historical SCI + SC2 combination, in which the particle-removing SC1 solution deposits certain metals, necessitating the metal-removing SC2. One approach is to add a chelating agent to the SC1. Extensive testing of SCI solutions with addition of the complexing agent 1,2-cyclohexanediaminetetraacetic acid (CDTA) were performed. CDTA was shown to he more stable than other complexing agents in SC1 solutions, facilitating significant hath life extension. Further, SC1 solutions with CDTA were shown to be capable of removing large quantities of metals from contaminated wafers, comparable to SC2, and preventing deposition of metals. An exception is aluminum, which can deposit from SC1 even with large amounts of added CDTA, but which can he removed by a subsequent dilute (1000:1) H 2 O:HCl step.