Nondestructive analysis of lithographic patterns with natural line edge roughness from Mueller matrix ellipsometric data

Nondestructive analysis of lithographic patterns with natural line edge roughness from Mueller matrix ellipsometric data
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根据 Mueller 矩阵椭圆测量数据对具有自然线边缘粗糙度的光刻图案进行无损分析

DOI:
10.1016/j.apsusc.2015.10.167
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发表时间:
2016
影响因子:
6.7
通讯作者:
Shiyuan Liu
Shiyuan Liu
中科院分区:
材料科学1区
文献类型:
--
作者:
Xiuguo Chen;Yating Shi;Hao Jiang;Chuanwei Zhang;Shiyuan Liu

文献摘要

被引文献

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米勒矩阵椭圆偏振术(MME)被应用于表征具有自然线边缘粗糙度(LER)的光刻图案。提出了一种基于有效介质近似的计算有效方法来模拟MME测量中LER的影响。我们提出的理论和实验结果与现实LER的光刻图案,这表明MME结合所提出的有效的建模方法是能够量化LER振幅。MME和扫描电子显微镜测量结果之间的定量比较也揭示了该技术用于在线无损线路粗糙度监测的强大潜力。
Mueller matrix ellipsometry (MME) is applied to characterize lithographic patterns with natural line edge roughness (LER). A computationally efficient approach based on effective medium approximation is proposed to model the effects of LER in MME measurements. We present both the theoretical and experimental results on lithographic patterns with realistic LER which demonstrate that MME in combination with the proposed effective modeling method is capable of quantifying LER amplitudes. Quantitative comparisons between the MME and scanning electron microscopy measured results also reveal the strong potential of this technique for in-line nondestructive line roughness monitoring.