Spin pumping through nanocrystalline topological insulators.
Spin pumping through nanocrystalline topological insulators.
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通过纳米晶拓扑绝缘体的自旋泵浦。
DOI：
10.1088/1361-6528/acc663
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发表时间：
2023
期刊：
影响因子：
3.5
通讯作者：
Burn DM
中科院分区：
文献类型：
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作者：
Burn DM
拓扑绝缘体（TI）中的拓扑表面态（TSS）为无耗散自旋输运提供了令人兴奋的前景。常见的基于自旋的器件，例如自旋阀，依赖于三层结构，其中非磁性层夹在两个铁磁（FM）层之间。在这种情况下，使用高质量单晶TI膜的主要缺点是单对自旋-动量锁定沟道跨越整个膜，这意味着只有非常小的自旋电流可以沿着膜的侧壁沿着从一个FM泵送到另一个FM。另一方面，使用纳米晶体TI膜，其中晶粒足够大以避免TSS的杂化，将有效地增加可用于自旋泵浦的自旋通道的数量。在这里，我们使用了元素选择性的，基于X射线的铁磁共振技术，以证明自旋泵从FM层在共振通过TI层，并进入FM自旋阱。
The topological surface states (TSSs) in topological insulators (TIs) offer exciting prospects for dissipationless spin transport. Common spin-based devices, such as spin valves, rely on trilayer structures in which a non-magnetic layer is sandwiched between two ferromagnetic (FM) layers. The major disadvantage of using high-quality single-crystalline TI films in this context is that a single pair of spin-momentum locked channels spans across the entire film, meaning that only a very small spin current can be pumped from one FM to the other, along the side walls of the film. On the other hand, using nanocrystalline TI films, in which the grains are large enough to avoid hybridization of the TSSs, will effectively increase the number of spin channels available for spin pumping. Here, we used an element-selective, x-ray based ferromagnetic resonance technique to demonstrate spin pumping from a FM layer at resonance through the TI layer and into the FM spin sink.