Low loss (∼ 6.45dB/cm) sub-micron polycrystalline silicon waveguide integrated with efficient SiON waveguide coupler
Low loss (∼ 6.45dB/cm) sub-micron polycrystalline silicon waveguide integrated with efficient SiON waveguide coupler
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DOI：
10.1364/oe.16.006425
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发表时间：
2008-04-28
期刊：
影响因子：
3.8
通讯作者：
Kwong, D. L.
中科院分区：
文献类型：
--
作者：
Fang, Q.;Song, J. F.;Kwong, D. L.
在本通讯中，利用深紫外光刻技术制作了亚微米尺寸的多晶硅单模光波导，并与锡永光波导耦合器集成。测量了多晶硅波导的传输损耗以及与保偏光纤的耦合损耗。对于整个C波段（即，λ类似于1520- 1565 nm），测量到TE模的传播损耗类似于6.45 ± 0.3dB/cm。对于TE模，采用光学平坦保偏光纤的耦合损耗近似为3.4dB/面。据我们所知，传播损耗是最好的报告结果之一。本文讨论了降低传输损耗的因素，特别是折射率对比度的影响。与SiO2包层相比，具有锡永包层的多晶硅波导具有更低的传播损耗。(c)2007年，美国光学学会。
In this communication, the sub-micron size polycrystalline silicon (poly-Si) single mode waveguides are fabricated and integrated with SiON waveguide coupler by deep UV lithography. The propagation loss of poly-Si waveguide and coupling loss with optical flat polarization-maintaining fiber (PMF) are measured. For whole C-band ( i.e., lambda similar to 1520-1565nm), the propagation loss of TE mode is measured to similar to 6.45 +/- 0.3dB/cm. The coupling loss with optical flat PMF is similar to 3.4dB/facet for TE mode. To the best of our knowledge, the propagation loss is among the best reported results. This communication discusses the factors reducing the propagation loss, especially the effect of the refractive index contrast. Compared to the SiO2 cladding, poly-Si waveguide with SiON cladding exhibits lower propagation loss. (c) 2007 Optical Society of America.