Impact of seed orientation on dislocation propagation in cast seed-assisted monocrystalline silicon
Impact of seed orientation on dislocation propagation in cast seed-assisted monocrystalline silicon
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DOI：
10.1016/j.solmat.2021.111084
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发表时间：
2021-09
影响因子：
6.9
通讯作者：
Wenjia Su;Xiao Han;Chang Chuanbo;Zhiqiang Zhang;Z. Zhenzhong;Wei Yang;Jiulong Li;Junfeng Wang-Junfeng-W
中科院分区：
文献类型：
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作者：
Wenjia Su;Xiao Han;Chang Chuanbo;Zhiqiang Zhang;Z. Zhenzhong;Wei Yang;Jiulong Li;Junfeng Wang-Junfeng-W
相邻籽晶间的取向差引起的位错严重影响了铸造籽晶辅助单晶硅（CSAM-Si）的质量和电池性能。设计了两个实验来分析籽晶取向和功能晶界对位错的影响。结果表明，位错的扩展严重依赖于籽晶的取向，取向<110>的籽晶会阻碍位错的横向扩展。大角度晶界（LA-GBs）对初始位错具有吸收作用，阻碍了初始位错的传播。CSAM-Si太阳能电池的平均效率可达21.8%，接近CZ-Si。因此，位错滑移机制和功能晶界方法可用于工业中，以进一步提高CSAM-Si太阳电池的性能。
Dislocations induced by the misorientation between neighboring seeds severely damage the quality of the cast seed-assisted monocrystalline silicon (CSAM-Si) and its solar cell performance. Two experiments are designed to analyze the impact of seed orientation and functional grain boundary on the dislocation. It is found that the dislocation propagation is severely depending on the seed orientation, and the <110>-oriented seed could block the dislocation spread laterally. The large angle grain boundaries (LA-GBs) could absorb the initial dislocations and block its propagation. The average CSAM-Si solar cell efficiency can reach up to 21.8%, which is close to CZ-Si. Consequently, the dislocation slipping mechanism and functional grain boundary method could be used in industry for further improving CSAM-Si solar cell performance.