ELECTRODEPOSITION OF SILICON FROM SOLUTIONS OF SILICON HALIDES IN APROTIC-SOLVENTS
ELECTRODEPOSITION OF SILICON FROM SOLUTIONS OF SILICON HALIDES IN APROTIC-SOLVENTS
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DOI：
10.1149/1.2127237
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发表时间：
1981-01-01
影响因子：
3.9
通讯作者：
AUSTIN, AE
中科院分区：
文献类型：
--
作者：
AGRAWAL, AK;AUSTIN, AE
以SiHCl~为硅源，从非水溶液中电沉积了非晶硅。典型的镀液组成是1.0M的SiHC18在含有0.1M的四丁基氯化铵的碳酸亚丙酯中作为支持电解质。沉积是在Ar气氛下35~176℃，-2.5V左右的恒电位条件下进行的。衬底材料包括铂、钛、钛-6Al-4V合金、n-Si和铟-锡氧化物包覆的熔融二氧化硅。沉积时的硅含有一些氢键，如SiL2或SiL1。通过选择合适的镀液成分和操作温度，可以控制镀层的质量和氢含量。电沉积工艺为生产可能用于太阳能电池应用的硅薄膜提供了一条廉价的途径。
Amorphous silicon has been electrodeposited from nonaqueous baths using SiHCI~ as the silicon source. A typical bath composition was 1.0 M SiHC18 in propylene carbonate containing 0.1 M tetrabutyl ammonium chloride as the supporting electrolyte. Deposits were made potentiostatically at around--2.5 V vs. Pt reference at temperatures 35~ 176 under an argon atmosphere. A variety of materials including Pt, Ti, Ti-6A1-4V alloy, n-Si, and indium-tin oxide coated fused silica were used for the substrate. The as-deposited silicon contains some hydrogen bonded as Sill2 or Sill. The quality and hydrogen content of the deposits are controllable by selecting the proper bath composition and operating temperature. The electrodeposition Process offers an inexpensive route for producing,-Si films for possible solar cell applications.