High temperature stability in non‐polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics
High temperature stability in non‐polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics
复制标题
非极性 (11$ ar 2 $0) InGaN 量子点的高温稳定性：激子和双激子动力学
DOI：
10.1002/pssc.201300666
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
R. Taylor
中科院分区：
文献类型：
--
作者：
B. Reid;T. Zhu;Christopher C. S. Chan;Claudius Kocher;F. Oehler;Robert M. Emery;M. Kappers;R. Oliver;R. Taylor
报道了生长在(112)面上的非极性InGaN量子点的光学研究。激子和双激子络合物由它们的功率依赖性来区分，并且表现出与传统的(0001)InGaN极性量子点相似的结合能(∼36 meV)和复合动力学。低至300ps的测量寿命表明，与极性的InGaN量子点相比，内部电场减少了。
对寿命为327ps的单个激子的随温度变化的显微光致发光测量表明，激子线宽在120K时没有明显的展宽，这表明与极性量子点相比，声子耦合强度有所降低。这个激子在77K下的测量寿命为313ps，这表明测量到的激子衰变几乎是纯辐射的。(2014Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
We report on optical studies of non-polar InGaN quantum dots grown on the (112) plane. Excitonic and biexcitonic complexes are identified by their power dependence and show similar binding energies (∼ 36 meV) and recombination dynamics to conventional polar (0001) InGaN quantum dots. Measured lifetimes as low as 300 ps suggest a reduced internal electric field when compared with polar InGaN quantum dots.
Temperature dependent micro-photoluminescence measurements on a single exciton with a lifetime of 327ps reveal no significant exciton linewidth broadening up to 120K, suggesting a reduction in phonon coupling strength when compared to polar quantum dots. This is supported by a measured lifetime of 313 ps for this exciton at 77 K, suggesting the measured exciton decay is almost purely radiative. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)