Photorefractive effect in GaP.
Photorefractive effect in GaP.
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GaP 中的光折变效应。
DOI：
10.1364/ol.15.001197
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发表时间：
1990
期刊：
影响因子：
3.6
通讯作者：
I. Ogura
中科院分区：
文献类型：
--
作者：
K. Kuroda;Y. Okazaki;T. Shimura;H. Okamura;M. Chihara;M. Itoh;I. Ogura
观察了非掺杂半绝缘带隙中的光折变效应。GaP的光折变灵敏度在0.6到0.9微米的光谱范围内。光折变中心是由P反位缺陷引起的深施主。利用633 nm的He-Ne激光器，测量了双光束耦合增益系数及其时间常数随光栅周期和抽运强度的变化。在1.1微米的光栅周期下，获得了最大增益系数0.33 cm(-1)。在泵浦光强为30 mW/cm(2)时，时间常数为3-20毫秒，与光栅周期有关。
The photorefractive effect in undoped semi-insulating GaP was observed. GaP has a photorefractive sensitivity in the spectral region of 0.6 to 0.9 microm. The photorefractive center is the deep donor resulting from the P antisite defect. We measured the two-beam coupling gain coefficient and its time constant as functions of the grating period and the pumping intensity, using a 633-nm He-Ne laser. The maximum gain coefficient of 0.33 cm(-1) was obtained at a grating period of 1.1 microm. The time constant, which depends on the grating period, was 3-20 msec at a pumping intensity of 30 mW/cm(2).