Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers
Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers
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嵌入外延 In0.53Ga0.47As 层中的 ErAs 纳米粒子的扫描透射电子显微镜
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
S. Stemmer
中科院分区：
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作者：
Dmitri O. Klenov;D. Driscoll;A. Gossard;S. Stemmer
我们使用高角度环形暗场成像扫描透射电子显微镜研究半金属ErAs纳米颗粒的晶体结构和颗粒形貌嵌入外延In0.53Ga0.47As层。增加量的Er的沉积导致更高密度的颗粒和高量的颗粒聚结。尽管通过用于透射电子显微镜的样品的厚度与基质重叠，但ErAs颗粒的晶体结构被明确地确定为岩盐。As亚晶格是连续的，横跨粒子和锌-半导体之间的界面。
We use high-angle annular dark-field imaging in scanning transmission electron microscopy to investigate the crystal structure and particle morphology of semimetallic ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers. Deposition of increasing amounts of Er results in a higher density of particles and particles coalescence for high amounts. Despite overlap with the matrix through the thickness of the sample used for transmission electron microscopy, the crystal structure of ErAs particles is unambiguously identified as rock salt. The As sublattice is continuous across the interface between the particle and the zinc-blende semiconductor.